FDN8601

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Mfr.Part #
FDN8601
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 100V 2.7A SUPERSOT3
Stock
2,885
In Stock :
2,885

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
100V
Element Configuration :
Single
Series :
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
109m Ω @ 1.5A, 10V
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Length :
1.4mm
REACH SVHC :
No SVHC
Width :
2.92mm
Mounting Type :
Surface Mount
Turn On Delay Time :
4.3 ns
Package / Case :
TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Turn-Off Delay Time :
7.8 ns
Weight :
30mg
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 10V
Power Dissipation-Max :
1.5W Ta
Vgs (Max) :
±20V
Nominal Vgs :
3 V
Terminal Form :
Gull wing
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
210pF @ 50V
Threshold Voltage :
3V
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
ECCN Code :
EAR99
Radiation Hardening :
No
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Power Dissipation :
1.5W
Continuous Drain Current (ID) :
2.7A
Factory Lead Time :
8 Weeks
Published :
2010
Terminal Finish :
Tin (Sn)
Rise Time :
1.3ns
Height :
940μm
Current - Continuous Drain (Id) @ 25°C :
2.7A Ta
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
3.4 ns
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Dual
Number of Elements :
1
Feedback Cap-Max (Crss) :
5 pF
Datasheets
FDN8601
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN8601 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, FDN8601 pinout, FDN8601 datasheet PDF, FDN8601 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN8601 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN8601


N-Channel Tape & Reel (TR) 109m Ω @ 1.5A, 10V ±20V 210pF @ 50V 5nC @ 10V TO-236-3, SC-59, SOT-23-3

FDN8601 Description


The FDN8601 is an N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDN8601 is suitable for primary DC-to-DC switch and load switch applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDN8601 is in the SSOT-3 package with 1.5W power dissipation.



FDN8601 Features


  • Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 1.5 A

  • Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 1.2 A

  • High-Performance Trench Technology for Extremely Low rDS(on)

  • High Power and Current Handling Capability in a Widely Used Surface Mount Package

  • Fast Switching Speed

  • 100% UIL Tested

  • RoHS Compliant



FDN8601 Applications


  • Primary DC-DC Switch

  • Load Switch

  • USB Type C High-end Smartphones & Tablet PCs

  • Multifunction Printers

  • Fan Motor Drives

  • Enterprise Copiers

  • Set-top Boxes


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