FDN8601
- Mfr.Part #
- FDN8601
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 2.7A SUPERSOT3
- Stock
- 2,885
- In Stock :
- 2,885
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Series :
- PowerTrench®
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 109m Ω @ 1.5A, 10V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 1.4mm
- REACH SVHC :
- No SVHC
- Width :
- 2.92mm
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 4.3 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Turn-Off Delay Time :
- 7.8 ns
- Weight :
- 30mg
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Power Dissipation-Max :
- 1.5W Ta
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 3 V
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 50V
- Threshold Voltage :
- 3V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.5W
- Continuous Drain Current (ID) :
- 2.7A
- Factory Lead Time :
- 8 Weeks
- Published :
- 2010
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 1.3ns
- Height :
- 940μm
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Ta
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 3.4 ns
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Feedback Cap-Max (Crss) :
- 5 pF
- Datasheets
- FDN8601

N-Channel Tape & Reel (TR) 109m Ω @ 1.5A, 10V ±20V 210pF @ 50V 5nC @ 10V TO-236-3, SC-59, SOT-23-3
FDN8601 Description
The FDN8601 is an N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDN8601 is suitable for primary DC-to-DC switch and load switch applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDN8601 is in the SSOT-3 package with 1.5W power dissipation.
FDN8601 Features
-
Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 1.5 A
-
Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 1.2 A
-
High-Performance Trench Technology for Extremely Low rDS(on)
-
High Power and Current Handling Capability in a Widely Used Surface Mount Package
-
Fast Switching Speed
-
100% UIL Tested
-
RoHS Compliant
FDN8601 Applications
-
Primary DC-DC Switch
-
Load Switch
-
USB Type C High-end Smartphones & Tablet PCs
-
Multifunction Printers
-
Fan Motor Drives
-
Enterprise Copiers
-
Set-top Boxes
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