FDMS8D8N15C

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Mfr.Part #
FDMS8D8N15C
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 150V 12.2A/85A 8PQFN
Stock
123
In Stock :
123

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
2.7W Ta 132W Tc
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
20 Weeks
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Package / Case :
8-PowerTDFN
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Rds On (Max) @ Id, Vgs :
8.8m Ω @ 45A, 10V
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 75V
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
12.2A Ta 85A Tc
Vgs (Max) :
±20V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDMS8D8N15C
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS8D8N15C from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, FDMS8D8N15C pinout, FDMS8D8N15C datasheet PDF, FDMS8D8N15C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS8D8N15C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS8D8N15C


N-Channel Tape & Reel (TR) 8.8m Ω @ 45A, 10V ±20V 3600pF @ 75V 50nC @ 10V 150V 8-PowerTDFN

FDMS8D8N15C Description


With a voltage of 30V, the FDMS8D8N15C is an N-channel Power MOSFET from ON Semiconductor. The FDMS8D8N15C has an operating temperature of -55°C to 150°C TJ and maximum power dissipation of 132W Tc. ON Semiconductor's innovative Power Trench process, which includes Shielded Gate technology, is used to make this N-Channel MV MOSFET. With the best-in-class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.



FDMS8D8N15C Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 8.8 m at VGS = 10 V, ID = 45 A

  • Max rDS(on) = 9.4 m at VGS = 8 V, ID = 22.5 A

  • Low Qrr, Soft Recovery Body Diode

  • Lowers Switching Noise/EMI

  • MSL1 Robust Package Design

  • 100% UIL Tested

  • These Devices are Pb?Free and are RoHS Compliant



FDMS8D8N15C Applications


  • Primary DC?DC MOSFET

  • Synchronous Rectifier in DC?DC and AC?DC

  • Motor Drive

  • Solar


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