FDMS8888
- Mfr.Part #
- FDMS8888
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.5A/21A 8PQFN
- Stock
- 4,973
- In Stock :
- 4,973
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 1.9 V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Length :
- 5mm
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation :
- 42W
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 13.5A
- Turn-Off Delay Time :
- 23 ns
- Fall Time (Typ) :
- 4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 9 ns
- Factory Lead Time :
- 26 Weeks
- Number of Pins :
- 8
- Weight :
- 74mg
- JESD-30 Code :
- R-PDSO-N5
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 21A Tc
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 15V
- Avalanche Energy Rating (Eas) :
- 54 mJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-PowerTDFN
- Drain to Source Breakdown Voltage :
- 30V
- Series :
- PowerTrench®
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Rise Time :
- 6ns
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 13.5A, 10V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Height :
- 1.05mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0095Ohm
- Width :
- 6mm
- Datasheets
- FDMS8888

N-Channel Tape & Reel (TR) 9.5m Ω @ 13.5A, 10V ±20V 1585pF @ 15V 33nC @ 10V 8-PowerTDFN
FDMS8888 N-Channel MOSFET has been created to minimize the loss in power conversion applications. FDMS8888 MOSFET has been upgraded to meet the latest advances in silicon and package technology are combined to provide the most efficient rDS(on) and high switching performance. ON Semiconductor FDMS8888 is suitable for notebook PC Synchronous Buck, Notebook PC Notebook Vcore and Notebook Battery Pack, Server and Switching Load Switch.
FDMS8888 Features
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
FDMS8888 Applications
Notebook PC
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
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