FDMS8888
- Mfr.Part #
- FDMS8888
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.5A/21A 8PQFN
- Stock
- 4,973
- In Stock :
- 4,973
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 21A Tc
- Rise Time :
- 6ns
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 9 ns
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Continuous Drain Current (ID) :
- 13.5A
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Height :
- 1.05mm
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 4 ns
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Series :
- PowerTrench®
- Width :
- 6mm
- Weight :
- 74mg
- Pbfree Code :
- yes
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Power Dissipation :
- 42W
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 13.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 15V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.0095Ohm
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 26 Weeks
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 23 ns
- JESD-30 Code :
- R-PDSO-N5
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Nominal Vgs :
- 1.9 V
- Datasheets
- FDMS8888
FDMS8888 Documents

N-Channel Tape & Reel (TR) 9.5m Ω @ 13.5A, 10V ±20V 1585pF @ 15V 33nC @ 10V 8-PowerTDFN
FDMS8888 N-Channel MOSFET has been created to minimize the loss in power conversion applications. FDMS8888 MOSFET has been upgraded to meet the latest advances in silicon and package technology are combined to provide the most efficient rDS(on) and high switching performance. ON Semiconductor FDMS8888 is suitable for notebook PC Synchronous Buck, Notebook PC Notebook Vcore and Notebook Battery Pack, Server and Switching Load Switch.
FDMS8888 Features
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
FDMS8888 Applications
Notebook PC
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
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