FDMS8680

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Number of Elements :

1

Mount :

Surface Mount

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

68.1mg

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

63A

Rds On (Max) @ Id, Vgs :

7m Ω @ 14A, 10V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 35A Tc

Fall Time (Typ) :

2 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

8

Turn-Off Delay Time :

21 ns

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Terminal Form :

Flat

Element Configuration :

Single

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-F5

Resistance :

7mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 15V

Power Dissipation-Max :

2.5W Ta 50W Tc

Rise Time :

3ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

14A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

Not Qualified

Power Dissipation :

2.5W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED