FDMS8670S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 1mA

Resistance :

3.5mOhm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

20A Ta 42A Tc

Factory Lead Time :

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

14 ns

Drain Current-Max (Abs) (ID) :

20A

Weight :

68.1mg

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta 78W Tc

Current Rating :

42A

Mount :

Surface Mount

Power Dissipation :

2.5W

Number of Terminations :

5

Transistor Application :

SWITCHING

Pbfree Code :

yes

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Threshold Voltage :

1.5V

Continuous Drain Current (ID) :

42A

Rise Time :

19ns

Pulsed Drain Current-Max (IDM) :

200A

Fall Time (Typ) :

10 ns

Series :

PowerTrench®, SyncFET™

FET Type :

N-Channel

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-30 Code :

R-PDSO-F5

Turn-Off Delay Time :

37 ns

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)