FDMS8670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 15V

Mount :

Surface Mount

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

20A Ta 42A Tc

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Vgs (Max) :

±20V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

42A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta 78W Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

37 ns

Resistance :

3.5mOhm

Threshold Voltage :

1.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

20A

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V

Lead Free :

Lead Free

Number of Pins :

8

Weight :

68.1mg

Current Rating :

42A

Turn On Delay Time :

14 ns

JESD-30 Code :

R-PDSO-F5

Pulsed Drain Current-Max (IDM) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Rise Time :

19ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

3V @ 1mA

Case Connection :

DRAIN

Terminal Position :

Dual

Series :

PowerTrench®, SyncFET™