FDMS86350ET80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-N5

Packaging :

Tape and Reel (TR)

Weight :

56.5mg

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

25A Ta 198A Tc

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0024Ohm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

8030pF @ 40V

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Fall Time (Typ) :

11 ns

Number of Pins :

8

Series :

PowerTrench®

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

JEDEC-95 Code :

MO-240AA

Transistor Element Material :

SILICON

Element Configuration :

Single

Turn-Off Delay Time :

40 ns

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

80V

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

Rise Time :

34ns

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Turn On Delay Time :

50 ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

198A

Number of Channels :

1

Number of Elements :

1

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

693A

Terminal Position :

Dual

Pbfree Code :

yes

Lead Free :

Lead Free

Power Dissipation-Max :

3.3W Ta 187W Tc