FDMS86350ET80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Transistor Application :

SWITCHING

Rise Time :

34ns

Drain-source On Resistance-Max :

0.0024Ohm

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

5

Element Configuration :

Single

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

8030pF @ 40V

Lead Free :

Lead Free

Fall Time (Typ) :

11 ns

Weight :

56.5mg

Pulsed Drain Current-Max (IDM) :

693A

JESD-609 Code :

e3

JEDEC-95 Code :

MO-240AA

Power Dissipation-Max :

3.3W Ta 187W Tc

JESD-30 Code :

R-PDSO-N5

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

25A Ta 198A Tc

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Position :

Dual

Number of Pins :

8

Turn On Delay Time :

50 ns

FET Type :

N-Channel

Mount :

Surface Mount

Continuous Drain Current (ID) :

198A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Pbfree Code :

yes

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

40 ns

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain to Source Breakdown Voltage :

80V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mounting Type :

Surface Mount