FDMS86350
- Mfr.Part #
- FDMS86350
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 25A/130A POWER56
- Stock
- 1,648
- In Stock :
- 1,648
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 50 ns
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Weight :
- 56.5mg
- Fall Time (Typ) :
- 11 ns
- JEDEC-95 Code :
- MO-240AA
- Width :
- 6.25mm
- Number of Terminations :
- 5
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 34ns
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5.1mm
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Package / Case :
- 8-PowerTDFN
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Height :
- 1.1mm
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 2.7W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10680pF @ 40V
- Drain to Source Breakdown Voltage :
- 80V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta 130A Tc
- JESD-30 Code :
- R-PDSO-N5
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 40 ns
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 25A
- Power Dissipation-Max :
- 2.7W Ta 156W Tc
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 25A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 300A
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Max Junction Temperature (Tj) :
- 150°C
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Pins :
- 8
- Published :
- 2017
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Datasheets
- FDMS86350

N-Channel Tape & Reel (TR) 2.4m Ω @ 25A, 10V ±20V 10680pF @ 40V 155nC @ 10V 8-PowerTDFN
FDMS86350 Description
FDMS86350 is an N-Channel PowerTrench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMS86350 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDMS86350 is offered in the Power-56-8 package. It is specified for operation from -55°C to +150°C with 156W power dissipation.
FDMS86350 Features
-
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
-
Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS86350 Applications
-
Primary MOSFET
-
Synchronous Rectifier
-
Load Switch
-
Motor Control Switch
-
RON and Inrush Current Calculations
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