FDMS86310
- Mfr.Part #
- FDMS86310
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 17A/50A 8PQFN
- Stock
- 8,756
- In Stock :
- 8,756
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 96W
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Turn On Delay Time :
- 28 ns
- Turn-Off Delay Time :
- 35 ns
- JESD-609 Code :
- e3
- Length :
- 5.1mm
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 50A Tc
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- JEDEC-95 Code :
- MO-240AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6290pF @ 40V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 96W Tc
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 50A
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Height :
- 1.05mm
- Width :
- 5.85mm
- Fall Time (Typ) :
- 9 ns
- JESD-30 Code :
- R-PDSO-F5
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 13 Weeks
- Number of Pins :
- 8
- Series :
- PowerTrench®
- Rise Time :
- 23ns
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 68.1mg
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 17A, 10V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package / Case :
- 8-PowerTDFN
- Continuous Drain Current (ID) :
- 17A
- Datasheets
- FDMS86310

N-Channel Tape & Reel (TR) 4.8m Ω @ 17A, 10V ±20V 6290pF @ 40V 95nC @ 10V 8-PowerTDFN
FDMS86310 Description
This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.
FDMS86310 Features
Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86310 Applications
DC-DC Merchant Power Supply
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