FDMS86310

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

9 ns

Radiation Hardening :

No

Width :

5.85mm

Drain Current-Max (Abs) (ID) :

50A

Length :

5.1mm

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 17A, 10V

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

17A Ta 50A Tc

Turn On Delay Time :

28 ns

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta 96W Tc

Weight :

68.1mg

Package / Case :

8-PowerTDFN

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 40V

Power Dissipation :

96W

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

35 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Factory Lead Time :

13 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Pbfree Code :

yes

Number of Elements :

1

Number of Terminations :

5

Vgs (Max) :

±20V

Rise Time :

23ns

JEDEC-95 Code :

MO-240AA

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Height :

1.05mm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

80V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

17A

ECCN Code :

EAR99

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)