FDMS86300

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

26ns

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

19A Ta 80A Tc

Weight :

68.1mg

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

7 Weeks

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 19A, 10V

Drain to Source Breakdown Voltage :

80V

Contact Plating :

Tin

Turn-Off Delay Time :

36 ns

Height :

1.05mm

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

19A

REACH SVHC :

No SVHC

Mount :

Surface Mount

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

120A

Input Capacitance (Ciss) (Max) @ Vds :

7082pF @ 40V

Pbfree Code :

yes

Length :

5mm

FET Type :

N-Channel

Threshold Voltage :

3.4V

JESD-609 Code :

e3

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Number of Terminations :

8

Series :

PowerTrench®

Power Dissipation-Max :

2.5W Ta 104W Tc

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

252 mJ

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Case Connection :

DRAIN

Published :

2010

Continuous Drain Current (ID) :

42A

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

3.4 V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Pins :

8

Turn On Delay Time :

31 ns

ECCN Code :

EAR99

Power Dissipation :

104W

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain-source On Resistance-Max :

0.0039Ohm

Radiation Hardening :

No

Width :

6mm

Fall Time (Typ) :

9 ns