FDMS86263P
- Mfr.Part #
- FDMS86263P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 4.4A/22A 8PQFN
- Stock
- 2,087
- In Stock :
- 2,087
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Fall Time (Typ) :
- 14 ns
- Package / Case :
- 8-PowerTDFN
- Published :
- 2017
- JESD-30 Code :
- R-PDSO-F5
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 150V
- Pbfree Code :
- yes
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.1mm
- Drain to Source Breakdown Voltage :
- -150V
- Number of Channels :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Drain Current-Max (Abs) (ID) :
- 22A
- Threshold Voltage :
- -2.9V
- Weight :
- 68.1mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta 22A Tc
- Terminal Position :
- Dual
- Width :
- 5.85mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 53m Ω @ 4.4A, 10V
- Series :
- PowerTrench®
- Contact Plating :
- Tin
- Number of Pins :
- 8
- Power Dissipation :
- 104W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Length :
- 5mm
- Continuous Drain Current (ID) :
- -4.4A
- Drain-source On Resistance-Max :
- 0.053Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3905pF @ 75V
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Factory Lead Time :
- 16 Weeks
- Pulsed Drain Current-Max (IDM) :
- 70A
- Turn-Off Delay Time :
- 37 ns
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- MO-240AA
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 17 ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Terminal Form :
- Flat
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Rise Time :
- 10ns
- Datasheets
- FDMS86263P

P-Channel Tape & Reel (TR) 53m Ω @ 4.4A, 10V ±25V 3905pF @ 75V 63nC @ 10V 150V 8-PowerTDFN
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
100% UIL tested
This product is optimized for fast switching applications as well as load switch applications
FDMS86263P MOSFET Applications
Synchronous Rectification Applications
UIS Rating System
Active Clamp Switch
Linear Switching Applications
Totem Pole Switching Circuits
Ground-Connected Loads
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