FDMS86263P

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Mfr.Part #
FDMS86263P
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET P-CH 150V 4.4A/22A 8PQFN
Stock
2,087
In Stock :
2,087

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Fall Time (Typ) :
14 ns
Package / Case :
8-PowerTDFN
Published :
2017
JESD-30 Code :
R-PDSO-F5
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
150V
Pbfree Code :
yes
Number of Terminations :
5
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.1mm
Drain to Source Breakdown Voltage :
-150V
Number of Channels :
1
Max Junction Temperature (Tj) :
150°C
Mounting Type :
Surface Mount
Element Configuration :
Single
FET Type :
P-Channel
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
25V
Drain Current-Max (Abs) (ID) :
22A
Threshold Voltage :
-2.9V
Weight :
68.1mg
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
not_compliant
Current - Continuous Drain (Id) @ 25°C :
4.4A Ta 22A Tc
Terminal Position :
Dual
Width :
5.85mm
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
53m Ω @ 4.4A, 10V
Series :
PowerTrench®
Contact Plating :
Tin
Number of Pins :
8
Power Dissipation :
104W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Length :
5mm
Continuous Drain Current (ID) :
-4.4A
Drain-source On Resistance-Max :
0.053Ohm
Input Capacitance (Ciss) (Max) @ Vds :
3905pF @ 75V
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Factory Lead Time :
16 Weeks
Pulsed Drain Current-Max (IDM) :
70A
Turn-Off Delay Time :
37 ns
Case Connection :
DRAIN
JEDEC-95 Code :
MO-240AA
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn On Delay Time :
17 ns
Number of Elements :
1
Vgs (Max) :
±25V
Terminal Form :
Flat
Power Dissipation-Max :
2.5W Ta 104W Tc
Rise Time :
10ns
Datasheets
FDMS86263P
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86263P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Terminations:5, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, FDMS86263P pinout, FDMS86263P datasheet PDF, FDMS86263P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86263P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86263P


P-Channel Tape & Reel (TR) 53m Ω @ 4.4A, 10V ±25V 3905pF @ 75V 63nC @ 10V 150V 8-PowerTDFN

FDMS86263P MOSFET Description


The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃. 



FDMS86263P MOSFET Features


RoHS Compliant

Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A

Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A

Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg

100% UIL tested

This product is optimized for fast switching applications as well as load switch applications



FDMS86263P MOSFET Applications


Synchronous Rectification Applications

UIS Rating System

Active Clamp Switch

Linear Switching Applications

Totem Pole Switching Circuits

Ground-Connected Loads


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