FDMS86263P
- Mfr.Part #
- FDMS86263P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 4.4A/22A 8PQFN
- Stock
- 2,087
- In Stock :
- 2,087
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 37 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pulsed Drain Current-Max (IDM) :
- 70A
- Packaging :
- Tape and Reel (TR)
- JEDEC-95 Code :
- MO-240AA
- Drain-source On Resistance-Max :
- 0.053Ohm
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 150V
- Fall Time (Typ) :
- 14 ns
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Continuous Drain Current (ID) :
- -4.4A
- Power Dissipation :
- 104W
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Published :
- 2017
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Terminal Form :
- Flat
- Number of Channels :
- 1
- Width :
- 5.85mm
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Factory Lead Time :
- 16 Weeks
- Drain to Source Breakdown Voltage :
- -150V
- Rds On (Max) @ Id, Vgs :
- 53m Ω @ 4.4A, 10V
- Weight :
- 68.1mg
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Threshold Voltage :
- -2.9V
- Drain Current-Max (Abs) (ID) :
- 22A
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PDSO-F5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 3905pF @ 75V
- Turn On Delay Time :
- 17 ns
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Height :
- 1.1mm
- Length :
- 5mm
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 5
- Series :
- PowerTrench®
- Vgs (Max) :
- ±25V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta 22A Tc
- Mounting Type :
- Surface Mount
- Rise Time :
- 10ns
- Datasheets
- FDMS86263P
FDMS86263P Documents

P-Channel Tape & Reel (TR) 53m Ω @ 4.4A, 10V ±25V 3905pF @ 75V 63nC @ 10V 150V 8-PowerTDFN
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
100% UIL tested
This product is optimized for fast switching applications as well as load switch applications
FDMS86263P MOSFET Applications
Synchronous Rectification Applications
UIS Rating System
Active Clamp Switch
Linear Switching Applications
Totem Pole Switching Circuits
Ground-Connected Loads
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