FDMS86255ET150

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Mfr.Part #
FDMS86255ET150
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 150V 10A/63A POWER56
Stock
2,326
In Stock :
2,326

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Mount :
Surface Mount
Series :
PowerTrench®
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Package / Case :
8-PowerTDFN
Turn On Delay Time :
21 ns
JEDEC-95 Code :
MO-240AA
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
10A Ta 63A Tc
Pulsed Drain Current-Max (IDM) :
276A
JESD-30 Code :
R-PDSO-N5
Power Dissipation-Max :
3.3W Ta 136W Tc
Terminal Position :
Dual
Terminal Form :
NO LEAD
Drain to Source Voltage (Vdss) :
150V
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Fall Time (Typ) :
6.2 ns
Factory Lead Time :
12 Weeks
Weight :
56.5mg
Input Capacitance (Ciss) (Max) @ Vds :
4480pF @ 75V
Turn-Off Delay Time :
28 ns
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
12.4m Ω @ 10A, 10V
Number of Pins :
8
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
63A
Peak Reflow Temperature (Cel) :
260
Element Configuration :
Single
FET Type :
N-Channel
Case Connection :
DRAIN
Number of Terminations :
5
Rise Time :
4.5ns
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Number of Channels :
1
Datasheets
FDMS86255ET150
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86255ET150 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~175°C TJ, Number of Pins:8, Number of Terminations:5, Number of Channels:1, FDMS86255ET150 pinout, FDMS86255ET150 datasheet PDF, FDMS86255ET150 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86255ET150 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86255ET150


N-Channel Tape & Reel (TR) 12.4m Ω @ 10A, 10V ±20V 4480pF @ 75V 63nC @ 10V 150V 8-PowerTDFN


FDMS86255ET150 Description


ON Semiconductor's FDMS86255ET150 N-Channel MOSFET is a popular choice. This N-Channel MOSFET is made using a revolutionary PowerTrench? process with Shielded Gate technology. This technique's on-state resistance has been improved while keeping excellent switching performance.


FDMS86255ET150 Features


Extended TJ rating to 175°C

Shielded Gate MOSFET Technology

Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A

Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next-generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant


FDMS86255ET150 Applications


This product is intended for general use and can be used in a variety of situations.


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