FDMS86252L
- Mfr.Part #
- FDMS86252L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- FDMS86252 - N-CHANNEL SHIELDED G
- Stock
- 2,940
- In Stock :
- 2,940
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta
- Published :
- 2017
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.5W
- Width :
- 5.85mm
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Number of Pins :
- 8
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 6.8 ns
- Length :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 4.4A, 10V
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Factory Lead Time :
- 8 Weeks
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 30A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JEDEC-95 Code :
- MO-240AA
- Height :
- 1.05mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.056Ohm
- Avalanche Energy Rating (Eas) :
- 73 mJ
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 150V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 74mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerTDFN
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 4.4A
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1335pF @ 75V
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 2.9 ns
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 19 ns
- Transistor Element Material :
- SILICON
- Rise Time :
- 1.4ns
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F5
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDMS86252L
N-Channel Tape & Reel (TR) 56m Ω @ 4.4A, 10V ±20V 1335pF @ 75V 21nC @ 10V 8-PowerTDFN
FDMS86252L Description
The N-channel MOSFET uses advanced PowerTritch manufacturing processes, combined with shielded grid technology. The process has been optimized for on-resistance, but it still maintains excellent switching performance.
FDMS86252L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
Advanced package and silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86252L Applications
This product is general usage and suitable for many different applications
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