FDMS86252
- Mfr.Part #
- FDMS86252
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.6A/16A 8PQFN
- Stock
- 820
- In Stock :
- 820
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 7.7 ns
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Ta 16A Tc
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- 8-PowerTDFN
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 15 ns
- Height :
- 1.05mm
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 20A
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Length :
- 5mm
- Number of Terminations :
- 5
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 51m Ω @ 4.6A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Width :
- 6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F5
- Fall Time (Typ) :
- 3.2 ns
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 69W Tc
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Breakdown Voltage :
- 150V
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Continuous Drain Current (ID) :
- 16A
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 905pF @ 75V
- Threshold Voltage :
- 2.8V
- JEDEC-95 Code :
- MO-240AA
- Element Configuration :
- Single
- Weight :
- 74mg
- Power Dissipation :
- 69W
- Rise Time :
- 2.3ns
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 4.6A
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Factory Lead Time :
- 8 Weeks
- Datasheets
- FDMS86252

N-Channel Tape & Reel (TR) 51m Ω @ 4.6A, 10V ±20V 905pF @ 75V 15nC @ 10V 8-PowerTDFN
FDMS86252 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
FDMS86252 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A
Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A
Advanced package and silicon combination for low RDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86252 Applications
DC-DC Conversion
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