FDMS86250

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Mfr.Part #
FDMS86250
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 150V 6.7A/20A 8PQFN
Stock
11,880
In Stock :
11,880

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Drain Current-Max (Abs) (ID) :
20A
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
14 ns
Pbfree Code :
yes
Published :
2010
Number of Terminations :
5
Height :
1.05mm
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Mount :
Surface Mount
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Fall Time (Typ) :
4.2 ns
Transistor Application :
SWITCHING
Package / Case :
8-PowerTDFN
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
MO-240AA
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Number of Pins :
8
Rise Time :
4.3ns
Power Dissipation-Max :
2.5W Ta 96W Tc
Length :
5mm
Number of Elements :
1
Series :
PowerTrench®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Width :
6mm
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Terminal Form :
Flat
Continuous Drain Current (ID) :
6.7A
Drain-source On Resistance-Max :
0.025Ohm
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-30 Code :
R-PDSO-F5
Power Dissipation :
96W
Turn-Off Delay Time :
22 ns
Current - Continuous Drain (Id) @ 25°C :
6.7A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Drain to Source Breakdown Voltage :
150V
Rds On (Max) @ Id, Vgs :
25m Ω @ 6.7A, 10V
Weight :
68.1mg
Factory Lead Time :
6 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
2330pF @ 75V
Terminal Position :
Dual
Datasheets
FDMS86250
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86250 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, FDMS86250 pinout, FDMS86250 datasheet PDF, FDMS86250 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86250 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86250


N-Channel Tape & Reel (TR) 25m Ω @ 6.7A, 10V ±20V 2330pF @ 75V 36nC @ 10V 8-PowerTDFN

FDMS86250 Description


FDMS86250 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 150V. The operating temperature of FDMS86250 is -55°C~150°C TJ and its maximum power dissipation is 96W. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance.



FDMS86250 Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A

  • Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A

  • Advanced package and silicon combinatory for low RDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS86250 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial

  • DC-DC Merchant Power Supply


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