FDMS86201
- Mfr.Part #
- FDMS86201
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 11.6A/49A 8PQFN
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 2.6V
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 7.1 ns
- Lead Free :
- Lead Free
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Length :
- 5mm
- Power Dissipation :
- 104W
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Nominal Vgs :
- 2.6 V
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 27 ns
- Rise Time :
- 7.7ns
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 11.6A, 10V
- Drain Current-Max (Abs) (ID) :
- 65A
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2735pF @ 60V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Width :
- 6mm
- Height :
- 1.05mm
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-PowerTDFN
- Published :
- 2017
- Turn On Delay Time :
- 13 ns
- Series :
- PowerTrench®
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 11.6A Ta 35A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Drain to Source Breakdown Voltage :
- 120V
- Continuous Drain Current (ID) :
- 35A
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JEDEC-95 Code :
- MO-240AA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 14.5mOhm
- JESD-30 Code :
- R-PDSO-F5
- Vgs (Max) :
- ±20V
- Weight :
- 68.1mg
- Number of Pins :
- 8
- Avalanche Energy Rating (Eas) :
- 264 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Datasheets
- FDMS86201

N-Channel Tape & Reel (TR) 11.5m Ω @ 11.6A, 10V ±20V 2735pF @ 60V 46nC @ 10V 8-PowerTDFN
FDMS86201 Description
The FDMS86201 N-Channel MOSFET is made with a sophisticated Power Trench? technology that has been specifically optimized to reduce on-state resistance while maintaining excellent switching performance.
FDMS86201 Features
-
100% UIL tested
-
RoHS Compliant
-
MSL1 robust package design
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
-
Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
-
Advanced Package and Silicon combination for low rDS(on)and high efficiency
FDMS86201 Applications
-
DC-DC conversion
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