FDMS86182

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Mfr.Part #
FDMS86182
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 78A 8PQFN
Stock
2,988
In Stock :
2,988

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
68.1mg
Drain to Source Voltage (Vdss) :
100V
Factory Lead Time :
20 Weeks
Terminal Finish :
Tin (Sn)
Series :
PowerTrench®
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
83W Tc
Vgs (Max) :
±20V
Pbfree Code :
yes
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
2635pF @ 50V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
78A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 150μA
JESD-609 Code :
e3
RoHS Status :
RoHS Compliant
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Operating Temperature :
-55°C~150°C TJ
Package / Case :
8-PowerTDFN
FET Type :
N-Channel
Element Configuration :
Single
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 6V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Rds On (Max) @ Id, Vgs :
7.2m Ω @ 28A, 10V
Datasheets
FDMS86182
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86182 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, FDMS86182 pinout, FDMS86182 datasheet PDF, FDMS86182 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86182 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86182


N-Channel Tape & Reel (TR) 7.2m Ω @ 28A, 10V ±20V 2635pF @ 50V 24nC @ 6V 100V 8-PowerTDFN

FDMS86182 Description


FDMS86182 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. Shielded Gate technology and a cutting-edge PowerTrench? technique are used to create this N-Channel MV MOFSET. With the best in class soft body diode, this method has been refined to reduce on-state resistance while maintaining exceptional switching performance.



FDMS86182 Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 7.2 m|? at VGS = 10 V, ID = 28 A

  • Max rDS(on) = 19.5 m|? at VGS = 6 V, ID = 14 A

  • 50% Lower Qrr than Other MOSFET Suppliers

  • Lowers Switching Noise/EMI

  • MSL1 Robust Package Design

  • 100% UIL Tested

  • RoHS Compliant



FDMS86182 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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