FDMS86180
- Mfr.Part #
- FDMS86180
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 151A POWER56
- Stock
- 4,455
- In Stock :
- 4,455
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 67A, 10V
- Power Dissipation-Max :
- 138W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6215pF @ 50V
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.1mm
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 138W
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Series :
- PowerTrench®
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 370μA
- Threshold Voltage :
- 3.2V
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 6V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 151A
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 151A Tc
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 24 ns
- Turn-Off Delay Time :
- 30 ns
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 100V
- Datasheets
- FDMS86180

N-Channel Tape & Reel (TR) 3.2m Ω @ 67A, 10V ±20V 6215pF @ 50V 54nC @ 6V 8-PowerTDFN
FDMS86180 Description
FDMS86180 is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. The operating temperature of FDMS86180 is -55°C~150°C TJ and its maximum power dissipation are 138W. FDMS86180 has 8 pins and it is available in Tape & Reel (TR) packaging way. This N-Channel MV MOSFET is produced using an advanced Power Trench? process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS86180 Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A
-
Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A
-
50% Lower Qrr than Other MOSFET Suppliers
-
Lowers Switching Noise/EMI
-
MSL1 Robust Package Design
-
100% UIL Tested
-
RoHS Compliant
FDMS86180 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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