FDMS86152

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.006Ohm

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Power Dissipation :

2.7W

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3370pF @ 50V

Continuous Drain Current (ID) :

45A

Current - Continuous Drain (Id) @ 25°C :

14A Ta 45A Tc

Fall Time (Typ) :

5 ns

Vgs (Max) :

±20V

Power Dissipation-Max :

2.7W Ta 125W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Terminal Position :

Dual

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Rise Time :

6ns

Package / Case :

8-PowerTDFN

Turn On Delay Time :

17 ns

JEDEC-95 Code :

MO-240AA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-30 Code :

R-PDSO-N5

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin

Pulsed Drain Current-Max (IDM) :

260A

Turn-Off Delay Time :

25 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

5

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6m Ω @ 14A, 10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Weight :

56.5mg

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

Series :

PowerTrench®