FDMS86150ET100
- Mfr.Part #
- FDMS86150ET100
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 16A POWER56
- Stock
- 5,289
- In Stock :
- 5,289
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 8
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 3.3W Ta 187W Tc
- Terminal Finish :
- Tin (Sn)
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 18 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4065pF @ 50V
- Series :
- PowerTrench®
- Rise Time :
- 8.3ns
- Drain to Source Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 28 ns
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Fall Time (Typ) :
- 6 ns
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 128A
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Weight :
- 56.5mg
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 128A Tc
- Rds On (Max) @ Id, Vgs :
- 4.85m Ω @ 16A, 10V
- Datasheets
- FDMS86150ET100

N-Channel Tape & Reel (TR) 4.85m Ω @ 16A, 10V ±20V 4065pF @ 50V 62nC @ 10V 8-PowerTDFN
The N-Channel MOSFET FDMS86150ET100 is produced using an advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.The device is characterized across a –55°C to +175°C temperature range which makes it suitable for industrial applications.
FDMS86150ET100 Features
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86150ET100 Applications
Automotive
Advanced driver assistance systems (ADAS)Body electronics & lightingHybrid, electric & powertrain systemsInfotainment & cluster
Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
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