FDMS86150

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.7W Ta 156W Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Packaging :

Digi-Reel®

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

300A

Current - Continuous Drain (Id) @ 25°C :

16A Ta 60A Tc

Height :

1.05mm

Length :

5.1mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

726 mJ

Continuous Drain Current (ID) :

60A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Series :

PowerTrench®

Terminal Position :

Dual

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

260

Weight :

56.5mg

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-N5

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin

Number of Terminations :

5

Turn-Off Delay Time :

28 ns

JEDEC-95 Code :

MO-240AA

Element Configuration :

Single

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4065pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

8.3ns

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Number of Pins :

8

Pbfree Code :

yes

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

4.85m Ω @ 16A, 10V

Drain to Source Breakdown Voltage :

100V

Width :

6.25mm

Power Dissipation :

156W

Fall Time (Typ) :

6 ns