FDMS86105

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Height :

1.05mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

34m Ω @ 6A, 10V

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Fall Time (Typ) :

2.4 ns

Number of Terminations :

5

Factory Lead Time :

13 Weeks

Terminal Position :

Dual

Turn On Delay Time :

6.7 ns

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 50V

Threshold Voltage :

2.8V

Power Dissipation :

48W

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

50 mJ

Turn-Off Delay Time :

12 ns

FET Type :

N-Channel

Rise Time :

2.1ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.034Ohm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

2.5W Ta 48W Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Width :

6mm

Mounting Type :

Surface Mount

Element Configuration :

Single

JESD-30 Code :

R-PDSO-F5

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Weight :

68.1mg

Mount :

Surface Mount

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JEDEC-95 Code :

MO-240AA

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

6A

RoHS Status :

ROHS3 Compliant

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

6A Ta 26A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Terminal Form :

Flat