FDMS86104
- Mfr.Part #
- FDMS86104
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7A/16A 8PQFN
- Stock
- 47,177
- In Stock :
- 47,177
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- * Fullname:
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-F5
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 7A, 10V
- Transistor Element Material :
- SILICON
- Voltage :
- 100V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 96 mJ
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.05mm
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 5mm
- Package / Case :
- 8-PowerTDFN
- Turn-Off Delay Time :
- 14.3 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 923pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Transistor Application :
- SWITCHING
- Published :
- 2006
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta 16A Tc
- Power Dissipation :
- 73W
- Turn On Delay Time :
- 8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Radiation Hardening :
- No
- Width :
- 6mm
- Drain-source On Resistance-Max :
- 0.024Ohm
- Power Dissipation-Max :
- 2.5W Ta 73W Tc
- Current :
- 16A
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 100V
- Continuous Drain Current (ID) :
- 16A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Rise Time :
- 3.5ns
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- Threshold Voltage :
- 2.9V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- JEDEC-95 Code :
- MO-240AA
- Fall Time (Typ) :
- 3.2 ns
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Datasheets
- FDMS86104
FDMS86104 Documents

N-Channel Tape & Reel (TR) 24m Ω @ 7A, 10V ±20V 923pF @ 50V 16nC @ 10V 8-PowerTDFN
FDMS86104 Description
The FDMS86104 N-Channel MOSFET is produced using On Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMS86104 Features
-
Shielded Gate MOSFET Technology
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
-
No SVHC
-
Lead Free
FDMS86104 Applications
-
DC-DC Conversion
-
Switching Application
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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