FDMS86103L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 104W Tc

Width :

6.15mm

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Turn-Off Delay Time :

35 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8m Ω @ 12A, 10V

Rise Time :

7.2ns

Weight :

68.1mg

Power Dissipation :

2.5W

Terminal Form :

Flat

Lead Free :

Lead Free

Threshold Voltage :

1.9V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.05mm

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

12A Ta 49A Tc

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

3710pF @ 50V

JEDEC-95 Code :

MO-240AA

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Turn On Delay Time :

13 ns

Contact Plating :

Tin

Published :

2010

Transistor Element Material :

SILICON

Series :

PowerTrench®

Fall Time (Typ) :

6 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

49A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Terminations :

5

Length :

5mm

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)