FDMS86101DC
- Mfr.Part #
- FDMS86101DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 14.5A DLCOOL56
- Stock
- 16,097
- In Stock :
- 16,097
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 90mg
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5.1mm
- Drain Current-Max (Abs) (ID) :
- 60A
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-F5
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3.2W Ta 125W Tc
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3135pF @ 50V
- Series :
- Dual Cool™, PowerTrench®
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Continuous Drain Current (ID) :
- 14.5A
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 125W
- Fall Time (Typ) :
- 5.5 ns
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 200A
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 14.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta 60A Tc
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 8
- Resistance :
- 7.5mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 8.2ns
- Package / Case :
- 8-PowerTDFN
- JEDEC-95 Code :
- MO-240AA
- FET Type :
- N-Channel
- Height :
- 1.05mm
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 25 ns
- Turn On Delay Time :
- 14 ns
- Number of Channels :
- 1
- Width :
- 5.85mm
- Datasheets
- FDMS86101DC
FDMS86101DC Documents

N-Channel Tape & Reel (TR) 7.5m Ω @ 14.5A, 10V ±20V 3135pF @ 50V 44nC @ 10V 8-PowerTDFN
Description
The FDMS86101DC MOSFET - N-Channel, POWERTRENCH?, DUAL COOL? 56 Shielded Gate 100 V, 60 A, 7.5 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. The lowest rDS(on) while maintaining good switching performance is now possible because of advancements in both silicon and DUAL COOL? package technologies. This is made possible by the exceptionally low Junction-to-Ambient thermal resistance.
Features
-
High performance technology for extremely low rDS(on)
-
100% UIL Tested
-
RoHS Compliant
-
Shielded Gate MOSFET Technology
-
DUAL COOL Top Side Cooling PQFN package
-
Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A
-
Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A
Applications
-
Primary DC?DC MOSFET
-
Secondary Synchronous Rectifier
-
Load Switch
-
Analog Electronics
-
Audio Power Amplifiers
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