FDMS86101DC
- Mfr.Part #
- FDMS86101DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 14.5A DLCOOL56
- Stock
- 16,097
- In Stock :
- 16,097
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 3135pF @ 50V
- Rise Time :
- 8.2ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn On Delay Time :
- 14 ns
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 5
- Factory Lead Time :
- 4 Weeks
- JESD-30 Code :
- R-PDSO-F5
- Power Dissipation-Max :
- 3.2W Ta 125W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- Length :
- 5.1mm
- Drain to Source Breakdown Voltage :
- 100V
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Width :
- 5.85mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain Current-Max (Abs) (ID) :
- 60A
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 25 ns
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 14.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 7.5mOhm
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta 60A Tc
- Weight :
- 90mg
- Fall Time (Typ) :
- 5.5 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- MO-240AA
- Pulsed Drain Current-Max (IDM) :
- 200A
- FET Type :
- N-Channel
- Height :
- 1.05mm
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Series :
- Dual Cool™, PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 14.5A
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Datasheets
- FDMS86101DC

N-Channel Tape & Reel (TR) 7.5m Ω @ 14.5A, 10V ±20V 3135pF @ 50V 44nC @ 10V 8-PowerTDFN
Description
The FDMS86101DC MOSFET - N-Channel, POWERTRENCH?, DUAL COOL? 56 Shielded Gate 100 V, 60 A, 7.5 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. The lowest rDS(on) while maintaining good switching performance is now possible because of advancements in both silicon and DUAL COOL? package technologies. This is made possible by the exceptionally low Junction-to-Ambient thermal resistance.
Features
-
High performance technology for extremely low rDS(on)
-
100% UIL Tested
-
RoHS Compliant
-
Shielded Gate MOSFET Technology
-
DUAL COOL Top Side Cooling PQFN package
-
Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A
-
Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A
Applications
-
Primary DC?DC MOSFET
-
Secondary Synchronous Rectifier
-
Load Switch
-
Analog Electronics
-
Audio Power Amplifiers
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