FDMS86101DC

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Mfr.Part #
FDMS86101DC
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 14.5A DLCOOL56
Stock
16,097
In Stock :
16,097

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
90mg
Mount :
Surface Mount
Vgs (Max) :
±20V
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Length :
5.1mm
Drain Current-Max (Abs) (ID) :
60A
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PDSO-F5
Number of Elements :
1
Power Dissipation-Max :
3.2W Ta 125W Tc
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
3135pF @ 50V
Series :
Dual Cool™, PowerTrench®
ECCN Code :
EAR99
Radiation Hardening :
No
Terminal Form :
Flat
Continuous Drain Current (ID) :
14.5A
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
125W
Fall Time (Typ) :
5.5 ns
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
200A
Max Junction Temperature (Tj) :
150°C
Terminal Finish :
Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Rds On (Max) @ Id, Vgs :
7.5m Ω @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C :
14.5A Ta 60A Tc
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
8
Resistance :
7.5mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
5
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
4 Weeks
Operating Mode :
ENHANCEMENT MODE
Rise Time :
8.2ns
Package / Case :
8-PowerTDFN
JEDEC-95 Code :
MO-240AA
FET Type :
N-Channel
Height :
1.05mm
Drain to Source Breakdown Voltage :
100V
Turn-Off Delay Time :
25 ns
Turn On Delay Time :
14 ns
Number of Channels :
1
Width :
5.85mm
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86101DC from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, Package / Case:8-PowerTDFN, Number of Channels:1, FDMS86101DC pinout, FDMS86101DC datasheet PDF, FDMS86101DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86101DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86101DC


N-Channel Tape & Reel (TR) 7.5m Ω @ 14.5A, 10V ±20V 3135pF @ 50V 44nC @ 10V 8-PowerTDFN

Description


The FDMS86101DC MOSFET - N-Channel, POWERTRENCH?, DUAL COOL? 56 Shielded Gate 100 V, 60 A, 7.5 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. The lowest rDS(on) while maintaining good switching performance is now possible because of advancements in both silicon and DUAL COOL? package technologies. This is made possible by the exceptionally low Junction-to-Ambient thermal resistance.



Features


  • High performance technology for extremely low rDS(on)

  • 100% UIL Tested

  • RoHS Compliant

  • Shielded Gate MOSFET Technology

  • DUAL COOL Top Side Cooling PQFN package

  • Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A

  • Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A



Applications


  • Primary DC?DC MOSFET

  • Secondary Synchronous Rectifier

  • Load Switch

  • Analog Electronics

  • Audio Power Amplifiers


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