FDMS86101A

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Mfr.Part #
FDMS86101A
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 13A/60A 8PQFN
Stock
5,757
In Stock :
5,757

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
4 ns
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
MO-240AA
JESD-30 Code :
R-PDSO-F5
Radiation Hardening :
No
Weight :
68.1mg
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
60A
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Factory Lead Time :
10 Weeks
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
13A Ta 60A Tc
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
100V
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Packaging :
Tape and Reel (TR)
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Pins :
8
Power Dissipation-Max :
2.5W Ta 104W Tc
Number of Terminations :
5
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2017
Rds On (Max) @ Id, Vgs :
8m Ω @ 13A, 10V
REACH SVHC :
No SVHC
Series :
PowerTrench®
Turn-Off Delay Time :
27 ns
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Rise Time :
5.4ns
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Element Configuration :
Single
JESD-609 Code :
e3
Length :
5mm
Terminal Position :
Dual
Turn On Delay Time :
19 ns
Package / Case :
8-PowerTDFN
Mount :
Surface Mount
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Terminal Form :
Flat
Height :
1.05mm
Input Capacitance (Ciss) (Max) @ Vds :
4120pF @ 50V
Width :
5.85mm
Power Dissipation :
104W
Threshold Voltage :
3.1V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
FET Type :
N-Channel
Number of Elements :
1
Datasheets
FDMS86101A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86101A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, FDMS86101A pinout, FDMS86101A datasheet PDF, FDMS86101A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86101A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86101A


N-Channel Tape & Reel (TR) 8m Ω @ 13A, 10V ±20V 4120pF @ 50V 58nC @ 10V 8-PowerTDFN

FDMS86101A Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.


FDMS86101A Features

Shielded Gate MOSFET Technology

Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A

Max rDS(on) = 13.5 m? at VGS = 6 V, ID = 9.5 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

MSL1 robust package design

100% UIL tested

100% Rg tested

RoHS Compliant


FDMS86101A Applications

DC-DC Conversion


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