FDMS86101A
- Mfr.Part #
- FDMS86101A
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A/60A 8PQFN
- Stock
- 5,757
- In Stock :
- 5,757
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 4 ns
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- MO-240AA
- JESD-30 Code :
- R-PDSO-F5
- Radiation Hardening :
- No
- Weight :
- 68.1mg
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 60A
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Factory Lead Time :
- 10 Weeks
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 60A Tc
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 8
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 13A, 10V
- REACH SVHC :
- No SVHC
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 27 ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 5.4ns
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Length :
- 5mm
- Terminal Position :
- Dual
- Turn On Delay Time :
- 19 ns
- Package / Case :
- 8-PowerTDFN
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Height :
- 1.05mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4120pF @ 50V
- Width :
- 5.85mm
- Power Dissipation :
- 104W
- Threshold Voltage :
- 3.1V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Datasheets
- FDMS86101A

N-Channel Tape & Reel (TR) 8m Ω @ 13A, 10V ±20V 4120pF @ 50V 58nC @ 10V 8-PowerTDFN
FDMS86101A Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
FDMS86101A Features
Shielded Gate MOSFET Technology
Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A
Max rDS(on) = 13.5 m? at VGS = 6 V, ID = 9.5 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
100% Rg tested
RoHS Compliant
FDMS86101A Applications
DC-DC Conversion
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