FDMS86101

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Pbfree Code :

yes

Mount :

Surface Mount

Power Dissipation :

2.5W

Element Configuration :

Single

Series :

PowerTrench®

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Length :

5.1mm

Continuous Drain Current (ID) :

60A

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Fall Time (Typ) :

7 ns

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

8m Ω @ 13A, 10V

Turn On Delay Time :

15 ns

Height :

1.1mm

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Elements :

1

Case Connection :

DRAIN

Width :

6.25mm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Number of Pins :

8

Resistance :

8mOhm

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

200A

JESD-30 Code :

R-PDSO-N5

Current - Continuous Drain (Id) @ 25°C :

12.4A Ta 60A Tc

JEDEC-95 Code :

MO-240AA

Turn-Off Delay Time :

27 ns

Number of Channels :

1

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 50V

Weight :

68.1mg

Threshold Voltage :

2.9V

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Power Dissipation-Max :

2.5W Ta 104W Tc