FDMS8570SDC

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Mfr.Part #
FDMS8570SDC
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 28A/60A DLCOOL56
Stock
11,419
In Stock :
11,419

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Flat
Weight :
90mg
Pbfree Code :
yes
Transistor Element Material :
SILICON
Power Dissipation-Max :
3.3W Ta 59W Tc
Number of Terminations :
5
Terminal Position :
Dual
Vgs(th) (Max) @ Id :
2.2V @ 1mA
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
28A Ta 60A Tc
Packaging :
Digi-Reel®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
60A
Power Dissipation :
59W
Mounting Type :
Surface Mount
Package / Case :
8-PowerTDFN
JESD-30 Code :
R-PDSO-F5
Rise Time :
4ns
JESD-609 Code :
e3
RoHS Status :
RoHS Compliant
Number of Pins :
8
JEDEC-95 Code :
MO-240AA
Drain to Source Breakdown Voltage :
25V
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
2.8m Ω @ 28A, 10V
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
100A
Case Connection :
DRAIN
Series :
PowerTrench®, SyncFET™
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Turn-Off Delay Time :
33 ns
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
2825pF @ 13V
Threshold Voltage :
1.5V
Published :
2017
Vgs (Max) :
±12V
Avalanche Energy Rating (Eas) :
45 mJ
Turn On Delay Time :
11 ns
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Fall Time (Typ) :
3 ns
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
12V
Mount :
Surface Mount
FET Feature :
Schottky Diode (Body)
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Datasheets
FDMS8570SDC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS8570SDC from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, FDMS8570SDC pinout, FDMS8570SDC datasheet PDF, FDMS8570SDC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS8570SDC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS8570SDC


N-Channel Digi-Reel® 2.8m Ω @ 28A, 10V ±12V 2825pF @ 13V 42nC @ 10V 8-PowerTDFN

FDMS8570SDC Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2825pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDMS8570SDC Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 100A.
a threshold voltage of 1.5V


FDMS8570SDC Applications


There are a lot of ON Semiconductor
FDMS8570SDC applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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