FDMS8560S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Height :

1.05mm

Turn On Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Lead Free :

Lead Free

Fall Time (Typ) :

5 ns

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

79 mJ

Length :

5.1mm

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Additional Feature :

ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

30A Ta 70A Tc

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Width :

5.85mm

Packaging :

Tape and Reel (TR)

Rise Time :

6ns

Drain Current-Max (Abs) (ID) :

70A

Continuous Drain Current (ID) :

35A

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±12V

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Element Material :

SILICON

Turn-Off Delay Time :

45 ns

FET Type :

N-Channel

Package / Case :

8-PowerTDFN

Drain to Source Breakdown Voltage :

25V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F5

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 13V

Weight :

90mg

JEDEC-95 Code :

MO-240AA

Number of Terminations :

5

Mount :

Surface Mount

Terminal Form :

Flat

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 65W Tc

Series :

PowerTrench®, SyncFET™

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

2.2V @ 1mA