FDMS8558SDC
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- Mfr.Part #
- FDMS8558SDC
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 38A/90A 8PQFN
- Stock
- 303
- In Stock ：
- 303
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Max Operating Temperature :
- 150°C
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 41W
- JESD-30 Code :
- R-PDSO-F5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 145 mJ
- REACH SVHC :
- No SVHC
- Rds On Max :
- 1.5 MΩ
- Width :
- 5.85mm
- Drain to Source Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 89W
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 5.1mm
- JEDEC-95 Code :
- MO-240AA
- Height :
- 1.05mm
- Threshold Voltage :
- 1.4V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Weight :
- 90mg
- Pulsed Drain Current-Max (IDM) :
- 140A
- Min Operating Temperature :
- -55°C
- Terminal Position :
- Dual
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Turn On Delay Time :
- 14 ns
- Terminal Form :
- Flat
- Drain to Source Resistance :
- 5.7mOhm
- Turn-Off Delay Time :
- 51 ns
- Rise Time :
- 8ns
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 90A
- Fall Time (Typ) :
- 7 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 5
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Input Capacitance :
- 5.118nF
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Datasheets
- FDMS8558SDC
Tape & Reel (TR) 25V
FDMS8558SDC Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 145 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 140A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.In this case, the threshold voltage of the transistor is 1.4V, which means that it will not activate any of its functions when its threshold voltage reaches 1.4V.For this transistor to work, a voltage 25V is required between drain and source (Vdss).
FDMS8558SDC Features
the avalanche energy rating (Eas) is 145 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 140A.
single MOSFETs transistor is 5.7mOhm
a threshold voltage of 1.4V
a 25V drain to source voltage (Vdss)
FDMS8558SDC Applications
There are a lot of ON Semiconductor
FDMS8558SDC applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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