FDMS8460
- Mfr.Part #
- FDMS8460
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 25A/49A 8PQFN
- Stock
- 10,440
- In Stock :
- 10,440
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 48 ns
- Factory Lead Time :
- 10 Weeks
- Threshold Voltage :
- 1.9V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 2.2MOhm
- Continuous Drain Current (ID) :
- 25A
- Drain Current-Max (Abs) (ID) :
- 49A
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-N5
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Series :
- PowerTrench®
- Package / Case :
- 8-PowerTDFN
- Fall Time (Typ) :
- 7 ns
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta 49A Tc
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 25A, 10V
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Number of Elements :
- 1
- Voltage :
- 40V
- Width :
- 6mm
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.5W
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Height :
- 1.05mm
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rise Time :
- 9ns
- Number of Terminations :
- 5
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 19 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 7205pF @ 20V
- Length :
- 5mm
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Datasheets
- FDMS8460
FDMS8460 Documents

N-Channel Tape & Reel (TR) 2.2m Ω @ 25A, 10V ±20V 7205pF @ 20V 110nC @ 10V 8-PowerTDFN
Description
The FDMS8460 is a MOSFET, N‐Channel, POWERTRENCH, 40 V, 49 A, 2.2 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? technology from ON Semiconductor, which has been carefully designed to reduce the on-state resistance while maintaining exceptional switching performance.
Features
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
-
Max rDS(on) = 2.2 m at VGS = 10 V, ID = 25 A
-
Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 21.7 A
-
Advanced Package and Silicon combination for low rDS(on)
Applications
-
DC?DC conversion
-
Automotive electronics
-
As for switching devices in electronic control units
-
As power converters in modern electric vehicles
-
Inverter applications
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