FDMS8333L
- Mfr.Part #
- FDMS8333L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N CH 40V 22A POWER 56
- Stock
- 1,440
- In Stock :
- 1,440
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Number of Pins :
- 8
- JESD-30 Code :
- R-PDSO-F5
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 76A Tc
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Factory Lead Time :
- 25 Weeks
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- MO-240AA
- Rise Time :
- 4.7ns
- Weight :
- 68.1mg
- Power Dissipation :
- 69W
- Power Dissipation-Max :
- 2.5W Ta 69W Tc
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 3.1m Ω @ 22A, 10V
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Element Configuration :
- Single
- Turn On Delay Time :
- 14 ns
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 250A
- Continuous Drain Current (ID) :
- 76A
- Drain Current-Max (Abs) (ID) :
- 22A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4545pF @ 20V
- Package / Case :
- 8-PowerTDFN
- Terminal Form :
- Flat
- Turn-Off Delay Time :
- 33 ns
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 40V
- Fall Time (Typ) :
- 4.2 ns
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Lead Free :
- Lead Free
- Datasheets
- FDMS8333L

N-Channel Tape & Reel (TR) 3.1m Ω @ 22A, 10V ±20V 4545pF @ 20V 64nC @ 10V 8-PowerTDFN
FDMS8333L Description
The N-channel MOSFET is designed to improve the overall efficiency of DC-DC converters using synchronous or conventional switching PWM controllers and minimize switch node ringing. It has been optimized for low gate charge, low RDS, fast switching speed and reverse recovery performance of body diodes.
FDMS8333L Features
Max RDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
Max RDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
Applications
Consumer
FDMS8333L Applications
low gate charge
low RDS
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