FDMS8320LDC
- Mfr.Part #
- FDMS8320LDC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 44A DLCOOL56
- Stock
- 1,395
- In Stock :
- 1,395
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 44A
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 3.2W Ta 125W Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Case Connection :
- DRAIN
- Power Dissipation :
- 3.2W
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 40V
- JESD-609 Code :
- e3
- Weight :
- 90mg
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 14 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 5.1mm
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 300A
- JESD-30 Code :
- R-PDSO-F5
- Transistor Element Material :
- SILICON
- Published :
- 2017
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- 8-PowerTDFN
- FET Type :
- N-Channel
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Height :
- 1.05mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- DS Breakdown Voltage-Min :
- 40V
- Width :
- 5.85mm
- Rise Time :
- 15ns
- JEDEC-95 Code :
- MO-240AA
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 44A Ta 130A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11635pF @ 20V
- Turn On Delay Time :
- 19 ns
- Series :
- Dual Cool™, PowerTrench®
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 44A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 69 ns
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Datasheets
- FDMS8320LDC

N-Channel Tape & Reel (TR) 1.1m Ω @ 44A, 10V ±20V 11635pF @ 20V 170nC @ 10V 40V 8-PowerTDFN
FDMS8320LDC Description
This N-Channel MOSFET is produced using an advanced Power Trench? process. Advancements in both silicon and Dual Cool? package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMS8320LDC Features
-
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
-
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next generation enhanced body diode technology, engineered for soft recovery
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS8320LDC Applications
-
Energy Generation & Distribution
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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