FDMS8050
- Mfr.Part #
- FDMS8050
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 30V 55A 8PQFN
- Stock
- 586
- In Stock :
- 586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 400A
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-N5
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 30V
- Number of Elements :
- 1
- Terminal Form :
- NO LEAD
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 55A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 0.65m Ω @ 55A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Avalanche Energy Rating (Eas) :
- 1536 mJ
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- HTS Code :
- 8541.29.00.95
- Reach Compliance Code :
- not_compliant
- Weight :
- 56.5mg
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-PowerTDFN
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3V @ 750μA
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- MO-240AA
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.00065Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 156W Tc
- Drain to Source Voltage (Vdss) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 22610pF @ 15V
- Case Connection :
- DRAIN
- Datasheets
- FDMS8050

N-Channel Tape & Reel (TR) 0.65m Ω @ 55A, 10V ±20V 22610pF @ 15V 285nC @ 10V 30V 8-PowerTDFN
FDMS8050 is an N-Channel MOSFET designed to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMS8050 has been optimized for low gate charger and extremely low Rds(on).
The FDMS8050 MOSFET can operate between -55°C and 150°C TJ available in advanced package and silicon combination for low rDS(on).
FDMS8050 Features
Ultra Low RDS(on)
Improve System Efficiency
Optimized for Low Gate Charge
Improve Switching Performance
Advanced Power 5x6mm package
Improve Thermal Conduction
100% UIL tested
RoHS Compliant
FDMS8050 Applications
ORing
DC-DC Synchronous Rectifier
Servers
Netcom
Communication
Cloud Computing
High End Computing
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