FDMS8023S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 26A, 10V

Power Dissipation :

59W

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

26A Ta 49A Tc

Turn On Delay Time :

12 ns

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 1mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Length :

5mm

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

MO-240AA

Width :

6mm

Threshold Voltage :

1.7V

Fall Time (Typ) :

4 ns

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 15V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

26A

Weight :

68.1mg

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Rise Time :

5ns

Case Connection :

DRAIN

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

32 ns

Drain-source On Resistance-Max :

0.0024Ohm

Power Dissipation-Max :

2.5W Ta 59W Tc

Radiation Hardening :

No

Number of Terminations :

5

Continuous Drain Current (ID) :

49A

Height :

1.05mm

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

1.7 V

Series :

PowerTrench®, SyncFET™