FDMS8018

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 30A, 10V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Published :

2010

Factory Lead Time :

18 Weeks

Fall Time (Typ) :

4.8 ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Series :

PowerTrench®

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Weight :

68.1mg

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

MO-240AA

Turn-Off Delay Time :

38 ns

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-F5

Height :

1.05mm

Package / Case :

8-PowerTDFN

JESD-609 Code :

e3

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Power Dissipation-Max :

2.5W Ta 83W Tc

Current - Continuous Drain (Id) @ 25°C :

30A Ta 120A Tc

RoHS Status :

ROHS3 Compliant

Width :

6.25mm

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

ECCN Code :

EAR99

Length :

5.1mm

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

30A

Terminal Finish :

Tin (Sn)

Number of Terminations :

5

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

5235pF @ 15V

Rise Time :

7.3ns

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V