FDMS8018
- Mfr.Part #
- FDMS8018
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A/120A 8PQFN
- Stock
- 8,883
- In Stock :
- 8,883
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Rise Time :
- 7.3ns
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta 120A Tc
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerTDFN
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 30A, 10V
- Weight :
- 68.1mg
- Fall Time (Typ) :
- 4.8 ns
- JESD-30 Code :
- R-PDSO-F5
- Height :
- 1.05mm
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Width :
- 6.25mm
- JESD-609 Code :
- e3
- Factory Lead Time :
- 18 Weeks
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Length :
- 5.1mm
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 30A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Power Dissipation :
- 2.5W
- Input Capacitance (Ciss) (Max) @ Vds :
- 5235pF @ 15V
- JEDEC-95 Code :
- MO-240AA
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2.5W Ta 83W Tc
- Turn-Off Delay Time :
- 38 ns
- Turn On Delay Time :
- 15 ns
- Datasheets
- FDMS8018

N-Channel Tape & Reel (TR) 1.8m Ω @ 30A, 10V ±20V 5235pF @ 15V 61nC @ 10V 8-PowerTDFN
FDMS8018 Description
The FDMS8018 N-Channel MOSFET has been specifically designed to improve the efficiency and minimize switch node ringing in DC/DC converters using either synchronous or conventional switching PWM controllers.
FDMS8018 has been optimized for low gate charge, low RDS(on), fast switching speed, and fast reverse recovery.
FDMS8018 Features
-
100% UIL tested
-
RoHS Compliant
-
MSL1 robust package design
-
Max rDS(on) = 1.8 m? at VGS = 10 V, ID = 30 A
-
Max rDS(on) = 2.4 m? at VGS = 4.5 V, ID = 26 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next-generation enhanced body diode technology, engineered for soft recovery
FDMS8018 Applications
-
DC-DC Conversion
-
Motor Bridge Switch
-
Load Switching
-
Consumer
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