FDMS7682
- Mfr.Part #
- FDMS7682
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 54,188
- In Stock :
- 54,188
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 2.2 ns
- Terminal Form :
- Flat
- Turn-Off Delay Time :
- 22 ns
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5mm
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- MO-240AA
- Continuous Drain Current (ID) :
- 22A
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerTDFN
- JESD-30 Code :
- R-PDSO-F5
- Rds On (Max) @ Id, Vgs :
- 6.3m Ω @ 14A, 10V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.5W Ta 33W Tc
- Power Dissipation :
- 33W
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.05mm
- Number of Terminations :
- 5
- Terminal Position :
- Dual
- Rise Time :
- 2.7ns
- Drain Current-Max (Abs) (ID) :
- 59A
- Pbfree Code :
- yes
- Width :
- 6mm
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 29 mJ
- Element Configuration :
- Single
- Series :
- PowerTrench®
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 74mg
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Nominal Vgs :
- 1.9 V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1885pF @ 15V
- Turn On Delay Time :
- 9.4 ns
- Factory Lead Time :
- 26 Weeks
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 22A Tc
- Published :
- 2006
- Drain-source On Resistance-Max :
- 0.0063Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Datasheets
- FDMS7682
FDMS7682 Documents

N-Channel Tape & Reel (TR) 6.3m Ω @ 14A, 10V ±20V 1885pF @ 15V 30nC @ 10V 8-PowerTDFN
FDMS7682 Description
With a voltage of 30V, the FDMS7682 is an N-channel Power MOSFET from ON Semiconductor. The FDMS7682 has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 33W. This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low RDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.
FDMS7682 Features
-
Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A
-
Max rDS(on) = 10.4 mΩat VGS = 4.5 V, ID = 11 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next-generation enhanced body diode technology, engineered for soft recovery
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS7682 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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