FDMS7680
- Mfr.Part #
- FDMS7680
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A/28A 8PQFN
- Stock
- 13,946
- In Stock :
- 13,946
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 53A
- Number of Terminations :
- 5
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Package / Case :
- 8-PowerTDFN
- Fall Time (Typ) :
- 3 ns
- Turn On Delay Time :
- 10 ns
- Drain to Source Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rds On (Max) @ Id, Vgs :
- 6.9m Ω @ 14A, 10V
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 4ns
- Turn-Off Delay Time :
- 21 ns
- Factory Lead Time :
- 18 Weeks
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 14A
- Pulsed Drain Current-Max (IDM) :
- 80A
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 56
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 28A Tc
- Avalanche Energy Rating (Eas) :
- 29 mJ
- JESD-609 Code :
- e3
- Weight :
- 68.1mg
- Drain-source On Resistance-Max :
- 0.0069Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1850pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PDSO-N5
- Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.5W Ta 33W Tc
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- JEDEC-95 Code :
- MO-240AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDMS7680
FDMS7680 Documents

N-Channel Tape & Reel (TR) 6.9m Ω @ 14A, 10V ±20V 1850pF @ 15V 28nC @ 10V 8-PowerTDFN
The FDMS7680 N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMS7680 Features
● Advanced Package and Silicon combination for low rDS(on) and high efficiency
● Next generation enhanced body diode technology, engineered for soft recovery.
● MSL1 robust package design
● 100% UIL tested
● RoHS Compliant
FDMS7680 Applications
● IMVP Vcore Switching for Notebook
● VRM Vcore Switching for Desktop and Server
● Oring FET / Load Switch
● DC-DC Conversion
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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