FDMS7678
- Mfr.Part #
- FDMS7678
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17.5A/26A 8PQFN
- Stock
- 77,306
- In Stock :
- 77,306
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 4ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- MO-240AA
- Continuous Drain Current (ID) :
- 17.5A
- Terminal Form :
- Flat
- Nominal Vgs :
- 1.5 V
- Pbfree Code :
- yes
- Power Dissipation :
- 41W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Length :
- 5.1mm
- FET Type :
- N-Channel
- Weight :
- 74mg
- Pulsed Drain Current-Max (IDM) :
- 70A
- Package / Case :
- 8-PowerTDFN
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.25mm
- Number of Pins :
- 8
- Element Configuration :
- Single
- Turn On Delay Time :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 15V
- Factory Lead Time :
- 26 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Threshold Voltage :
- 1.5V
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Ta 26A Tc
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-F5
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 17.5A, 10V
- Height :
- 1.05mm
- Turn-Off Delay Time :
- 26 ns
- Drain to Source Breakdown Voltage :
- 30V
- Fall Time (Typ) :
- 3 ns
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.3W Ta 41W Tc
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 26A
- Datasheets
- FDMS7678
FDMS7678 Documents

N-Channel Tape & Reel (TR) 5.5m Ω @ 17.5A, 10V ±20V 2410pF @ 15V 39nC @ 10V 8-PowerTDFN
FDMS7678 Description
FDMS7678 is a 30V N-Channel Power Trench? MOSFET. The N-Channel MOSFET FDMS7678 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance. The onsemi FDMS7678 is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDMS7678 Features
-
Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A
-
Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A
-
High-performance technology for extremely low RDS(on)
-
Termination is Lead-free
-
RoHS Compliant
FDMS7678 Applications
-
Notebook PC
-
Portable Devices
-
DC-DC Buck Converters
-
Notebook Battery Power Management
-
Load Switch in Notebook
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