FDMS7660
- Mfr.Part #
- FDMS7660
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 25A/42A 8PQFN
- Stock
- 44,298
- In Stock :
- 44,298
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 17 ns
- Package / Case :
- 8-PowerTDFN
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 5
- Rise Time :
- 9ns
- Series :
- PowerTrench®
- Drain to Source Breakdown Voltage :
- 30V
- Factory Lead Time :
- 18 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 25A, 10V
- Number of Elements :
- 1
- Number of Pins :
- 8
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 5565pF @ 15V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Threshold Voltage :
- 1.9V
- Element Configuration :
- Single
- JEDEC-95 Code :
- MO-240AA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 37 ns
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Nominal Vgs :
- 1.9 V
- Resistance :
- 2.8MOhm
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.5W
- JESD-30 Code :
- R-PDSO-N5
- Continuous Drain Current (ID) :
- 25A
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Height :
- 1.05mm
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 7 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta 42A Tc
- JESD-609 Code :
- e3
- Weight :
- 68.1mg
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6mm
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Datasheets
- FDMS7660

N-Channel Tape & Reel (TR) 2.8m Ω @ 25A, 10V ±20V 5565pF @ 15V 84nC @ 10V 8-PowerTDFN
FDMS7660 Description
This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low rDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.
FDMS7660 Features
-
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
-
Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS7660 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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