FDMS7580

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain-source On Resistance-Max :

0.0075Ohm

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

59W

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Width :

6mm

Nominal Vgs :

1.6 V

Threshold Voltage :

1.6V

Continuous Drain Current (ID) :

15A

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

49A

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

6.8ns

Vgs (Max) :

±20V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Height :

1.05mm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Ta 29A Tc

Transistor Application :

SWITCHING

Number of Pins :

8

Weight :

68.1mg

Drain to Source Breakdown Voltage :

25V

Turn On Delay Time :

7.3 ns

Package / Case :

8-PowerTDFN

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

2.5W Ta 27W Tc

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Length :

5mm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Fall Time (Typ) :

4.5 ns

Element Configuration :

Single

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

60A

Terminal Position :

Dual

Turn-Off Delay Time :

17 ns

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 10V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

32 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 13V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN