FDMS6681Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

241nC @ 10V

Vgs (Max) :

±25V

Published :

2017

Radiation Hardening :

No

Terminal Position :

Dual

Turn On Delay Time :

15 ns

Height :

1.1mm

Number of Elements :

1

Mount :

Surface Mount

Factory Lead Time :

10 Weeks

Number of Terminations :

5

Transistor Application :

SWITCHING

Length :

5mm

Rise Time :

38ns

JESD-30 Code :

R-PDSO-N5

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta 73W Tc

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 22.1A, 10V

Drain to Source Breakdown Voltage :

-30V

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

21.1A Ta 49A Tc

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Feedback Cap-Max (Crss) :

2020 pF

Threshold Voltage :

-1.7V

Continuous Drain Current (ID) :

-21.1A

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.5W

Fall Time (Typ) :

197 ns

Width :

6mm

Weight :

68.1mg

FET Type :

P-Channel

Resistance :

3.2mOhm

Input Capacitance (Ciss) (Max) @ Vds :

10380pF @ 15V

Series :

PowerTrench®

ECCN Code :

EAR99

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

260 ns