FDMS6673BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15.2A Ta 28A Tc

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5915pF @ 15V

Drain-source On Resistance-Max :

0.0068Ohm

Feedback Cap-Max (Crss) :

1045 pF

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

2009

Series :

PowerTrench®

HTS Code :

8541.29.00.95

Power Dissipation-Max :

2.5W Ta 73W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Reach Compliance Code :

not_compliant

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

MO-240AA

Qualification Status :

Not Qualified

Vgs (Max) :

±25V

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 15.2A, 10V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

15.2A

Mounting Type :

Surface Mount

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V