FDMS5672
- Mfr.Part #
- FDMS5672
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10.6A/22A 8MLP
- Stock
- 1,701
- In Stock :
- 1,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 3.2 V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 10.6A Ta 22A Tc
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Position :
- Dual
- Rise Time :
- 17ns
- Dual Supply Voltage :
- 60V
- Termination :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 30V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Turn On Delay Time :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 231mg
- Package / Case :
- 8-PowerWDFN
- Voltage - Rated DC :
- 60V
- Terminal Form :
- NO LEAD
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 13 Weeks
- Threshold Voltage :
- 3.2V
- Current Rating :
- 22A
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 10.6A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Width :
- 6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 10.6A
- Pbfree Code :
- yes
- Contact Plating :
- Gold
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 8 ns
- JESD-609 Code :
- e4
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Power Dissipation :
- 2.5W
- Published :
- 2006
- Resistance :
- 11.5mOhm
- Turn-Off Delay Time :
- 22 ns
- Number of Terminations :
- 8
- Height :
- 750μm
- Drain to Source Breakdown Voltage :
- 60V
- Length :
- 5mm
- Series :
- UltraFET™
- Element Configuration :
- Single
- Datasheets
- FDMS5672
N-Channel Tape & Reel (TR) 11.5m Ω @ 10.6A, 10V ±20V 2800pF @ 30V 45nC @ 10V 8-PowerWDFN
FDMS5672 Description
UItraFET devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they are optimized for rDS(on), low ESR, low total, and Miller gate charge. This product is intended for broad use and can be used to a wide range of scenarios.
FDMS5672 Features
-
At Vgs = 10V,=10.6A, Maxds(o n) = 11.5mQ.
-
At Vgs = 6 V, Id = 8A, Maxds(o n) = 16.5mQ.
-
Qg = 32nC at Vgs = 10VTYP Qg = 32nC at Vgs = 10VTYP Qg = 32nC at Vgs = 10V
-
'Low Miller Charge' is a term used to describe a situation in which
-
Efficie ncy at High Freque ncies Optimized
-
RoHS Complia nt is an acronym for "Restriction of Hazardous Substances" (RoHS).
FDMS5672 Applications
DC - DC Conversion
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