FDMS4435BZ

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Mfr.Part #
FDMS4435BZ
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET P-CH 30V 9A/18A 8PQFN
Stock
2,448
In Stock :
2,448

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 15V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain to Source Voltage (Vdss) :
30V
Packaging :
Tape and Reel (TR)
REACH SVHC :
No SVHC
Drain-source On Resistance-Max :
0.02Ohm
Series :
PowerTrench®
Published :
2006
Gate to Source Voltage (Vgs) :
25V
Case Connection :
DRAIN
Package / Case :
8-PowerTDFN
Fall Time (Typ) :
19 ns
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Weight :
74mg
Pbfree Code :
yes
Rise Time :
10ns
Number of Pins :
8
JEDEC-95 Code :
MO-240AA
JESD-30 Code :
R-PDSO-F5
Mount :
Surface Mount
Transistor Element Material :
SILICON
Factory Lead Time :
26 Weeks
ECCN Code :
EAR99
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
9 ns
Width :
6mm
Terminal Position :
Dual
Additional Feature :
ULTRA-LOW RESISTANCE
Vgs (Max) :
±25V
Terminal Form :
Flat
Mounting Type :
Surface Mount
Power Dissipation :
39W
Terminal Finish :
Tin (Sn)
Drain to Source Breakdown Voltage :
-30V
Radiation Hardening :
No
Turn-Off Delay Time :
35 ns
Threshold Voltage :
-1.9V
Transistor Application :
SWITCHING
Length :
5mm
Drain Current-Max (Abs) (ID) :
9A
Rds On (Max) @ Id, Vgs :
20m Ω @ 9A, 10V
Number of Terminations :
5
Power Dissipation-Max :
2.5W Ta 39W Tc
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
1.05mm
FET Type :
P-Channel
Continuous Drain Current (ID) :
9A
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
9A Ta 18A Tc
Pulsed Drain Current-Max (IDM) :
50A
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Datasheets
FDMS4435BZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS4435BZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:5, FDMS4435BZ pinout, FDMS4435BZ datasheet PDF, FDMS4435BZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS4435BZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS4435BZ


P-Channel Tape & Reel (TR) 20m Ω @ 9A, 10V ±25V 2050pF @ 15V 47nC @ 10V 30V 8-PowerTDFN

FDMS4435BZ Description


This PChannel MOSFET is made with onsemi's innovative POWERTRENCH technique, which is specifically designed to reduce onstate resistance. This device is ideal for Power Management and load switching applications found in notebook computers and portable battery packs.



FDMS4435BZ Features


  • Max rDS(on) = 20 m at VGS = ?10 V, ID = ?8.5 A

  • Max rDS(on) = 37 m at VGS = ?4.5 V, ID = ?6.3 A

  • Extended VGSS Range (?25 V) for Battery Applications

  • High Performance Trench Technology for Extremely Low rDS(on)

  • High Power and Current Handling Capability

  • HBM ESD Protection Level > 7 kV Typical*

  • 100% UIL Tested

  • These Devices are Pb?Free and are RoHS Compliant



FDMS4435BZ Applications


  • High Side in DC ? DC Buck Converters

  • Notebook Battery Power Management

  • Load Switch in Notebook


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