FDMS3672

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

7.4A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Length :

5mm

Power Dissipation-Max :

2.5W Ta 78W Tc

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta 22A Tc

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

23mOhm

Turn On Delay Time :

23 ns

Height :

750μm

Transistor Application :

SWITCHING

Contact Plating :

Gold

Mount :

Surface Mount

Fall Time (Typ) :

8 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2680pF @ 50V

Power Dissipation :

2.5W

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Width :

6mm

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Current Rating :

22A

Current :

22A

Lead Free :

Lead Free

Case Connection :

DRAIN

Vgs (Max) :

±20V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

8-PowerWDFN

Transistor Element Material :

SILICON

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.4A, 10V

Voltage - Rated DC :

100V

Rise Time :

11ns

Voltage :

100V

Turn-Off Delay Time :

36 ns

Series :

UltraFET™

Drain to Source Breakdown Voltage :

100V