FDMS3672
- Mfr.Part #
- FDMS3672
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.4A/22A 8MLP
- Stock
- 19,081
- In Stock :
- 19,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Number of Pins :
- 8
- Current :
- 22A
- Series :
- UltraFET™
- Current Rating :
- 22A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7.4A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Ta 22A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 5mm
- Fall Time (Typ) :
- 8 ns
- Width :
- 6mm
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.5W
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Factory Lead Time :
- 10 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pbfree Code :
- yes
- Resistance :
- 23mOhm
- Height :
- 750μm
- Package / Case :
- 8-PowerWDFN
- Turn On Delay Time :
- 23 ns
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Rise Time :
- 11ns
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 36 ns
- JESD-609 Code :
- e4
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 100V
- Continuous Drain Current (ID) :
- 7.4A
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Contact Plating :
- Gold
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2680pF @ 50V
- Datasheets
- FDMS3672
N-Channel Tape & Reel (TR) 23m Ω @ 7.4A, 10V ±20V 2680pF @ 50V 44nC @ 10V 8-PowerWDFN
FDMS3672 Description
FDMS3672 is a 100V N-Channel UltraFET Trench MOSFET. The onsemi FDMS3672 combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total, and Miller gate charge, the FDMS3672 is ideal for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS3672 is in the Power-56-8 package with 2.5W power dissipation.
FDMS3672 Features
-
Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A
-
Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A
-
Typical Qg = 31 nC at VGS = 10 V
-
Low Miller Charge
-
Optimized efficiency at high frequencies
FDMS3672 Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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