FDMS2672

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

10 Weeks

Power Dissipation :

2.5W

Published :

2006

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

2315pF @ 100V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

36 ns

Number of Pins :

8

Continuous Drain Current (ID) :

3.7A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta 20A Tc

Current Rating :

3.7A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

ECCN Code :

EAR99

Mount :

Surface Mount

Element Configuration :

Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Turn On Delay Time :

22 ns

Height :

750μm

Width :

6mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Series :

UltraFET™

JESD-609 Code :

e4

Terminal Form :

NO LEAD

Package / Case :

8-PowerWDFN

Length :

5mm

Vgs (Max) :

±20V

Rise Time :

11ns

Rds On (Max) @ Id, Vgs :

77m Ω @ 3.7A, 10V

Voltage - Rated DC :

200V

Contact Plating :

Gold

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

20A

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

77mOhm

Terminal Position :

Dual

Weight :

210mg

Power Dissipation-Max :

2.5W Ta 78W Tc

Number of Elements :

1