FDMS0312S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.05mm

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Position :

Dual

Transistor Element Material :

SILICON

Fall Time (Typ) :

4 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Turn On Delay Time :

12 ns

Element Configuration :

Single

Number of Terminations :

5

Number of Elements :

1

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 18A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Mount :

Surface Mount

Contact Plating :

Tin

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

19A Ta 42A Tc

Pulsed Drain Current-Max (IDM) :

90A

Drain-source On Resistance-Max :

0.0044Ohm

Package / Case :

8-PowerTDFN

Series :

PowerTrench®, SyncFET™

Case Connection :

DRAIN

Width :

6mm

Lead Free :

Lead Free

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Length :

5mm

Factory Lead Time :

26 Weeks

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Power Dissipation :

2.5W

Weight :

74mg

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

28 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-F5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

MO-240AA

Power Dissipation-Max :

2.5W Ta 46W Tc

Continuous Drain Current (ID) :

19A

Mounting Type :

Surface Mount

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

60 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 15V

Rise Time :

5ns