FDMS0312S
- Mfr.Part #
- FDMS0312S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,814
- In Stock :
- 3,814
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5mm
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Lead Free :
- Lead Free
- Number of Terminations :
- 5
- Turn-Off Delay Time :
- 28 ns
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 18A, 10V
- JEDEC-95 Code :
- MO-240AA
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820pF @ 15V
- Package / Case :
- 8-PowerTDFN
- Power Dissipation :
- 2.5W
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 26 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 42A Tc
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Height :
- 1.05mm
- Weight :
- 74mg
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F5
- Fall Time (Typ) :
- 4 ns
- Pbfree Code :
- yes
- Width :
- 6mm
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 19A
- Terminal Position :
- Dual
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Pulsed Drain Current-Max (IDM) :
- 90A
- Rise Time :
- 5ns
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2.5W Ta 46W Tc
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®, SyncFET™
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMS0312S

N-Channel Tape & Reel (TR) 4.9m Ω @ 18A, 10V ±20V 2820pF @ 15V 46nC @ 10V 8-PowerTDFN
FDMS0312S Description
With a voltage of 30V, the FDMS0312S is an N-channel Power MOSFET from ON Semiconductor. The FDMS0312S has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 2.5W. The FDMS0312S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0312S Features
-
Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 18 A
-
Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A
-
Advanced Package and Silicon combination for low rDS(on)and high efficiency
-
SyncFET Schottky Body Diode
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS0312S Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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