FDMS0312S
- Mfr.Part #
- FDMS0312S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,814
- In Stock :
- 3,814
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn-Off Delay Time :
- 28 ns
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 42A Tc
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerTDFN
- Vgs (Max) :
- ±20V
- Height :
- 1.05mm
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Power Dissipation-Max :
- 2.5W Ta 46W Tc
- Pulsed Drain Current-Max (IDM) :
- 90A
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Continuous Drain Current (ID) :
- 19A
- Drain to Source Breakdown Voltage :
- 30V
- JESD-30 Code :
- R-PDSO-F5
- Weight :
- 74mg
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 18A, 10V
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Width :
- 6mm
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Power Dissipation :
- 2.5W
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- MO-240AA
- Rise Time :
- 5ns
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Terminal Form :
- Flat
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 26 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 4 ns
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Length :
- 5mm
- Number of Terminations :
- 5
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820pF @ 15V
- Series :
- PowerTrench®, SyncFET™
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Datasheets
- FDMS0312S

N-Channel Tape & Reel (TR) 4.9m Ω @ 18A, 10V ±20V 2820pF @ 15V 46nC @ 10V 8-PowerTDFN
FDMS0312S Description
With a voltage of 30V, the FDMS0312S is an N-channel Power MOSFET from ON Semiconductor. The FDMS0312S has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 2.5W. The FDMS0312S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0312S Features
-
Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 18 A
-
Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A
-
Advanced Package and Silicon combination for low rDS(on)and high efficiency
-
SyncFET Schottky Body Diode
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS0312S Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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